Description: 3D TCAD Simulation for CMOS Nanoeletronic Devices by Yung-Chun Wu, Yi-Ruei Jhan This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). FORMAT Hardcover LANGUAGE English CONDITION Brand New Publisher Description This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices.The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field. Back Cover This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal-oxide-semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal-oxide-semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field. Author Biography Dr. Yung-Chun Wu received his B.S. degree in Physics from National Central University in 1996, his M.S. degree in Physics from National Taiwan University in 1998, and his Ph.D. from National Chiao Tung University, Taiwan, in 2005. From 1998 to 2002, he was an assistant researcher at National Nano Device Laboratories, Hsinchu, Taiwan, where he was primarily engaged in research on single electron transistor and electron beam lithography technology. In 2006, he joined the Department of Engineering and System Science, National Tsing-Hua University, Hsinchu, Taiwan, where he is currently working as an associate professor. He teaches 3D CMOS semiconductor nanoelectronic devices by TCAD simulation course for seven years. His research interests include nanoelectronic devices and 3D TCAD simulation, flash memory devices, and solar cells. He has published 56 international SCI papers on nanoelectronic devices.Yi-Ruei Jhan received the B.S. degree in Physics from National Dong Hwa University in 2010, M. S. degree in Engineering and System Science from National Tsing Hua University in 2012, and Ph.D. degree in Engineering and System Science from National Tsing Hua University in 2015. In 2016, he joined the Research and Development department of Taiwan Semiconductor Manufacturing Company (TSMC) after his graduation. His research interests include Nanoelectronic MOSFET devices, TCAD simulation and Nonvolatile memory devices. He is author of book: 3D TCAD Simulation for CMOS Nanoeletronic Devices. Table of Contents Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools.- Simulation analysis of 2D MOSFET.- Simulation analysis of 3D FinFET with LG = 15 nm.- Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm.- Simulation analysis of GAA NWFET.- Simulation analysis of Junctionless FET with LG = 10 nm.- Simulation analysis of Tunnel FET.- Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm. Feature Simulates the electrical properties of silicon CMOS (complementary metal-oxide-semiconductor), starting with the designs of 2D MOSFET (metal-oxide-semiconductor field-effect transistor) and 3D Silicon FinFET CMOS (Fin Field Effect Transistor, FinFET) devices Introduces pioneering nano-semiconductor devices such as junctionless field-effect transistor (FET) and tunneling FET variants Predicts the feasible options for silicon and germanium FET of ultimate minimum dimensions Details ISBN9811030650 Publisher Springer Verlag, Singapore Year 2017 ISBN-10 9811030650 ISBN-13 9789811030659 Format Hardcover Pages 330 Edition 1st Imprint Springer Verlag, Singapore Place of Publication Singapore Country of Publication Singapore DEWEY 537.622 Media Book Publication Date 2017-07-05 Language English DOI 10.1007/978-981-10-3066-6 UK Release Date 2017-07-05 Edited by Francois Raulin Birth 1974 Affiliation European University Viadrina, Germany Position journalist Qualifications S. J. Author Yi-Ruei Jhan Edition Description 1st ed. 2018 Alternative 9789811097799 Audience Professional & Vocational Illustrations 240 Illustrations, color; 3 Illustrations, black and white; XIII, 330 p. 243 illus., 240 illus. in color. We've got this At The Nile, if you're looking for it, we've got it. With fast shipping, low prices, friendly service and well over a million items - you're bound to find what you want, at a price you'll love! TheNile_Item_ID:127857732;
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ISBN-13: 9789811030659
Book Title: 3D TCAD Simulation for CMOS Nanoeletronic Devices
Number of Pages: 330 Pages
Language: English
Publication Name: 3d Tcad Simulation for Cmos Nanoeletronic Devices
Publisher: Springer Verlag, Singapore
Publication Year: 2017
Subject: Engineering & Technology
Item Height: 235 mm
Item Weight: 6387 g
Type: Textbook
Author: Yung-Chun Wu, Yi-Ruei Jhan
Subject Area: Material Science
Item Width: 155 mm
Format: Hardcover
